Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2006-01-24
2006-01-24
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S396000, C438S399000, C438S672000, C438S720000, C438S738000, C438S740000
Reexamination Certificate
active
06989313
ABSTRACT:
A capacitor has a lower electrode formed on an insulation layer, a dielectric layer formed on the lower electrode, an upper electrode layer formed on the dielectric layer, and a first protection layer pattern formed on the upper electrode layer. The upper electrode layer is etched using the first protection layer pattern to form an upper electrode. A second protection layer is formed enclosing the dielectric layer, the upper electrode and the first protection layer pattern.
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F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Thomas Toniae M.
Wilczewski Mary
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