Metal inks for improved contact resistance

Details Metal inks for improved contact resistance Metal inks for improved contact resistance

2011-07-12

2011-07-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S637000, C257SE21273

Reexamination Certificate

active

07977240

ABSTRACT:
Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.

REFERENCES:
patent: 7732349 (2010-06-01), Yamamoto
patent: 7749299 (2010-07-01), Vanheusden et al.

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