Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-12
2010-11-30
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S408000, C257S410000, C257S412000, C257SE21626, C438S184000, C438S230000, C438S267000, C438S303000, C438S304000, C438S446000, C438S595000, C438S596000
Reexamination Certificate
active
07843007
ABSTRACT:
A method is disclosed to reduce parasitic capacitance in a metal high dielectric constant (MHK) transistor. The method includes forming a MHK gate stack upon a substrate, the MHK gate stack having a bottom layer of high dielectric constant material, a middle layer of metal, and a top layer of one of amorphous silicon or polycrystalline silicon. The method further forms a depleted sidewall layer on sidewalls of the MHK gate stack so as to overlie the middle layer and the top layer, and not the bottom layer. The depleted sidewall layer is one of amorphous silicon or polycrystalline silicon. The method further forms an offset spacer layer over the depleted sidewall layer and over exposed surfaces of the bottom layer.
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Chang Leland
Lauer Isaac
Mo Renee T.
Sleight Jeffrey W.
Harrington & Smith
International Business Machines - Corporation
Jung Michael
Richards N Drew
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