Metal gate with zirconium

Details Metal gate with zirconium Metal gate with zirconium

2006-03-02

2008-10-21

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C257S204000, C257S288000, C257S310000, C257SE21177, C257SE21632, C438S199000

Reexamination Certificate

active

07439105

ABSTRACT:
A gate electrode (202) for a transistor including a metal gate structure (207) containing zirconium and a polycrystalline silicon cap (209) located there over. The metal gate structure (207) is located over a gate dielectric (205). The zirconium inhibits diffusion of silicon from the cap to the metal gate structure and gate dielectric. In one embodiment, the gate dielectric is a high K dielectric.

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