Metal gate with composite film stack

Details Metal gate with composite film stack Metal gate with composite film stack

2006-04-18

2006-04-18

Graybill, David E. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S288000, C257S412000, C257S588000

Reexamination Certificate

active

07030431

ABSTRACT:
A novel metal gate structure includes a gate oxide layer formed on a surface of a silicon substrate, a doped silicon layer stacked on the gate oxide layer, a CVD ultra-thin titanium nitride film deposited on the doped silicon layer, a tungsten nitride layer stacked on the CVD ultra-thin titanium nitride film, a tungsten layer stacked on the tungsten nitride layer, and a nitride cap layer stacked on the tungsten layer. A liquid phase deposition (LPD) oxide spacer is formed on each sidewall of the metal gate stack. A silicon nitride spacer is formed on the LPD oxide spacer. The thickness of the CVD ultra-thin titanium nitride film is between 10 and 100 angstroms.

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