Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000, C257S380000, C257S358000
Reexamination Certificate
active
07994576
ABSTRACT:
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.
REFERENCES:
patent: 6162584 (2000-12-01), Chen
patent: 6406956 (2002-06-01), Tsai
patent: 6573134 (2003-06-01), Ma
patent: 7084478 (2006-08-01), Lee et al.
patent: 7602027 (2009-10-01), Burke et al.
patent: 2005/0148118 (2005-07-01), Zheng et al.
patent: 2007/0082440 (2007-04-01), Shiratake
patent: 2009/0236669 (2009-09-01), Chen
Fan Cheng-Wen
Liang Victor-Chiang
Lin Chien-Ting
Tseng Chih-Yu
Tseng Kun-Szu
Hsu Winston
Luu Chuong A.
Margo Scott
United Microelectronics Corp.
LandOfFree
Metal gate transistor and resistor and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal gate transistor and resistor and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal gate transistor and resistor and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2764811