Metal gate stack and semiconductor gate stack for CMOS devices

Details Metal gate stack and semiconductor gate stack for CMOS devices Metal gate stack and semiconductor gate stack for CMOS devices

2007-12-12

2011-10-04

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S250000, C257S351000, C257S411000, C257SE27064, C257SE29064, C438S154000, C438S157000, C438S169000, C438S199000, C438S216000

Reexamination Certificate

active

08030709

ABSTRACT:
A semiconductor gate stack comprising a silicon oxide based gate dielectric and a doped semiconductor material is formed on a semiconductor substrate. A high-k material metal gate electrode comprising a high-k gate dielectric and a metal gate portion is also formed on the semiconductor substrate. Oxygen-impermeable dielectric spacers are formed on the sidewalls of the semiconductor gate stack and the high-k material metal gate stack. The oxygen-impermeable dielectric spacer on the semiconductor gate stack is removed, while the oxygen impermeable dielectric spacer on the high-k material metal gate electrode is preserved. A low-k dielectric spacer is formed on the semiconductor gate stack, which provides a low parasitic capacitance for the device employing the semiconductor gate stack.

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