Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-17
2011-05-17
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000, C257SE29158
Reexamination Certificate
active
07944006
ABSTRACT:
Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
REFERENCES:
patent: 6188120 (2001-02-01), Andricacos et al.
patent: 6873048 (2005-03-01), Gao et al.
patent: 6967131 (2005-11-01), Saenger et al.
patent: 2005/0037557 (2005-02-01), Doczy et al.
patent: 2006/0166474 (2006-07-01), Vereecken et al.
patent: 2007/0190767 (2007-08-01), Nakamura et al.
patent: 2008/0102613 (2008-05-01), Elers
Basker Veeraraghavan S.
Deligianni Hariklia
Jammy Rajarao
Paruchuri Vamsi Krishna
Romankiw Lubomyr T.
Budd Paul A
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Jackson, Jr. Jerome
Percello Louis J.
LandOfFree
Metal gate electrode stabilization by alloying does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal gate electrode stabilization by alloying, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal gate electrode stabilization by alloying will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2645290