Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-10
2010-11-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S288000, C257S266000, C438S211000, C438S257000, C438S264000
Reexamination Certificate
active
07834387
ABSTRACT:
A first gate stack comprising two stacked gate electrodes in a first device region, a second gate stack comprising a metal gate electrode in a second device region, and a third gate stack comprising a semiconductor gate electrode in a third device region are formed by forming and removing portions of a silicon-oxide based gate dielectric layer, a first doped semiconductor layer, an interfacial dielectric layer, a high-k gate dielectric layer, a metal gate layer, and an optional semiconductor material layer in various device regions. The first gate stack may be employed to form a flash memory, and the second and third gate stacks may be employed to form a pair of p-type and n-type field effect transistors.
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Booth, Jr. Roger A.
Kim Deok-kee
Yang Haining S.
Yu Xiaojun
Abate Esq. Joseph P.
International Business Machines - Corporation
Khan Farid
Monbleau Davienne
Scully , Scott, Murphy & Presser, P.C.
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