Metal film vapor phase deposition method and vapor phase...

Details Metal film vapor phase deposition method and vapor phase... Metal film vapor phase deposition method and vapor phase...

2006-05-23

2006-05-23

Meeks, Timothy (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S564000, C427S569000, C427S573000, C427S250000, C427S253000, C438S687000

Reexamination Certificate

active

07048973

ABSTRACT:
A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxClygas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

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