Metal film forming method

Details Metal film forming method Metal film forming method

1995-12-27

1999-04-20

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438713, 438725, 438978, 20419236, H01L 2100

Patent

active

058952713

ABSTRACT:
A metal film forming method by which a metal film having a desired pattern can be formed with good reproducibility and satisfactory precision. In a metal film forming method for forming a metal film into the desired pattern on a surface of an object by the lift-off method, a resist layer is laminated on the surface of the object, the resist layer is exposed to light with the desired pattern and it is developed. Radio frequency sputtering is then performed against the resist layer so that the opening is deformed into a shape which is suited for the lift-off process. A metal film is then laminated on the surfaces of the resist layer and the metal film forming object. Then the resist layer is subjected to lift-off processing, whereby the metal film can be formed with good precision and satisfactory reproducibility. In this way, such a metal film forming method can be realized that a metal film having the desired pattern can be formed with good reproducibility and satisfactory precision.

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