Metal fill region of a semiconductor chip

Details Metal fill region of a semiconductor chip Metal fill region of a semiconductor chip

2006-10-03

2009-02-10

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S622000, C438S624000

Reexamination Certificate

active

07489039

ABSTRACT:
Disclosed is a metal fill region of a semiconductor chip including a plurality of layer sets of the semiconductor chip, each set including a first metal fill layer, a second metal fill layer, and an insulation layer included disposed in planes parallel to each other, a plurality of metal fill pieces disposed in each of the metal fill layers, a metal fill piece axis of each of the pieces, wherein each of the axes perpendicularly intersects the planes of said metal fill layers and the insulation layer from any point of reference, and a metal fill pattern configured to position the pieces so that the axis of each piece in the first metal fill layer is linearly displaced of the axis of each piece in the second metal fill layer in at least one direction orthogonal to each of the metal fill axes.

REFERENCES:
patent: 6797999 (2004-09-01), Hou et al.

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