Metal ferroelectric silicon field effect transistor memory

Details Metal ferroelectric silicon field effect transistor memory Metal ferroelectric silicon field effect transistor memory

1998-04-29

2000-10-03

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518501, 327295, G11C 1122

Patent

active

06128212&

ABSTRACT:
On the surface of a semiconductor substrate between a source region and a drain region formed on the semiconductor substrate, an insulating layer, a conductive thin film used as a floating electrode, a ferroelectric thin film and a conductive thin film used as a control electrode are successively formed. Writing or erasing is performed by causing a potential difference between the control electrode and the semiconductor substrate to reverse the polarization of the ferroelectric thin film.

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