Metal electrode mask in a method of fault failure analysis and c

Details Metal electrode mask in a method of fault failure analysis and c Metal electrode mask in a method of fault failure analysis and c

1999-01-15

2000-09-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 16, G01R 3126

Patent

active

06124144&

ABSTRACT:
With regard to a method for fault or failure analysis of a fault or failure phenomenon caused by a leakage current, or a method for characterization of semiconductor devices, pre-treatment is conducted to check a leakage point of the semiconductor devices covered by a conductive film. The pre-treatment includes a step of forming a metal film having a lower etching rate than a conductive film over a part of the conductive film. The metal film is used as a mask for forming a nonetching area on the conductive film, when the conductive film is etched. The metal film is also used as an electrode pad to be applied a potential at the characterization of the semiconductor devices.

REFERENCES:
patent: 5504340 (1996-04-01), Mizumura et al.
patent: 5561293 (1996-10-01), Penget et al.
patent: 5760892 (1998-06-01), Koyama
patent: 5943346 (1999-08-01), Sanada

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