Metal electrode for superconducting current path formed of oxide

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

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257 36, 257 39, H01L 2906

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active

057738432

ABSTRACT:
A metal electrode disposed on a surface of an oxide superconductor and forming electric contact with the oxide superconductor wherein at least a portion of the metal electrode is in contact with a side surface of the oxide superconductor which is perpendicular to the surface on which the metal electrode is disposed.

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Ghandhi, Sorab K., VLSI Fabrication Principles, John Wiley and Sons, New York, pp. 453-455, 1983.

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