Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-02-20
1998-06-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 257 39, H01L 2906
Patent
active
057738432
ABSTRACT:
A metal electrode disposed on a surface of an oxide superconductor and forming electric contact with the oxide superconductor wherein at least a portion of the metal electrode is in contact with a side surface of the oxide superconductor which is perpendicular to the surface on which the metal electrode is disposed.
REFERENCES:
patent: 5098656 (1992-03-01), Zimmerman et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5248663 (1993-09-01), Noshiro et al.
patent: 5278136 (1994-01-01), Bednorz et al.
patent: 5407903 (1995-04-01), Nakamura et al.
patent: 5422336 (1995-06-01), Tsuda et al.
patent: 5430011 (1995-07-01), Tanaka et al.
Ghandhi, Sorab K., VLSI Fabrication Principles, John Wiley and Sons, New York, pp. 453-455, 1983.
Iiyama Michitomo
Nakamura Takao
Crane Sara W.
Feeney William L.
Sumitomo Electric Industries Inc.
LandOfFree
Metal electrode for superconducting current path formed of oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal electrode for superconducting current path formed of oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal electrode for superconducting current path formed of oxide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1862594