Metal electrode and bonding method using the metal electrode

Details Metal electrode and bonding method using the metal electrode Metal electrode and bonding method using the metal electrode

2006-07-18

2006-07-18

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C438S615000

Reexamination Certificate

active

07078330

ABSTRACT:
A metal electrode is formed on a substrate. The metal electrode includes a first layer, a second layer, and a third layer lying, from an outermost surface of the metal electrode toward the substrate, in this order. The first layer contains tin as a principal constituent and the second layer contains a metallic element which produces an eutectic reaction with tin, wherein the melting point of the first layer is higher than the melting point of the second layer. The third layer is an underlying metallic layer for the first and second layers.

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W. So et al., “High Temperature Joints Manufactured at Low Temperature”,IEEE, Electronic Components and Technology Conference, 1998, pp. 284-291, California.

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