Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1998-07-31
2000-02-08
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
H01L 2100
Patent
active
060227567
ABSTRACT:
A sensor (10) having polysilicon strain-sensing elements (20) on a metal diaphragm (16). A thick-film insulating layer (18) covers the metal diaphragm (16), and thin-film polysilicon resistive elements (20) are formed on the thick-film insulating layer (18). Thick-film conductors (22) are formed on the thick-film insulating layer (18) and contact the thin-film polysilicon resistive elements (20) to form electrical interconnects to the resistive elements (20). The thick-film conductors (22) preferably contain silicon in order to reduce diffusion of silicon from the polysilicon resistive elements (20). The thick-film insulating layer (18) may be made up of a number of individual thick-film layers, the uppermost of which is stable and nonreactive with the thin-film polysilicon resistive elements (20) and the thick-film conductors (22) at temperatures of at least 600.degree. C. A passivation layer (24) overlies the thin-film polysilicon resistive elements (20) and the thick-film conductors (22). The sensor (10) can be made sufficiently rugged to be used as a structural member of a fluid-containing vessel.
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Ellis Marion Edmond
Little Lewis Henry
Sparks Douglas Ray
Viduya Andres Deogracias
Delco Electronics Corp.
Funke Jimmy L.
Mulpuri Savitri
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