Metal deposit process

Details Metal deposit process Metal deposit process

2006-07-18

2006-07-18

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000

Reexamination Certificate

active

07078340

ABSTRACT:
Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plate onto the exposed surface at a controllable rate. When the copper deposited on the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.

REFERENCES:
patent: 4908242 (1990-03-01), Hughes et al.
patent: 5750018 (1998-05-01), Brasch
patent: 6178623 (2001-01-01), Kitazawa et al.
patent: 6180524 (2001-01-01), Ferrell
patent: 6197181 (2001-03-01), Chen
patent: 2003/0196989 (2003-10-01), Zhou et al.

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