Metal bond pad for integrated circuits allowing improved...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C029S843000, C257S773000, C257S774000, C257S775000, C257S781000, C257S784000, C257S786000

Reexamination Certificate

active

06952053

ABSTRACT:
The present invention is a metal bond pad that provides electrical and mechanical connection to an integrated circuit (IC). The metal bond pad is configured to accommodate for probe travel during probing measurements, without modifying the size of the passivation opening of the bond pad. This enables higher density of active devices on the IC and therefore increases integration and lowers IC cost. The metal bond pad for the integrated circuit includes a substrate, a first metal layer, and a second metal layer. The substrate has the first metal layer disposed therein, having an opening from the top surface of the substrate. The second metal layer has a first-end portion, a second-end portion and a center portion disposed between the first-end portion and the second-end portion. The center portion of the second metal layer is aligned with the opening in the substrate and a bottom surface of the center portion is in contact with the top surface of the first metal layer. A top surface of the center portion has a recessed region that forms a first edge with said first-end portion and a second edge with said second-end portion. The first-end portion of the second metal layer is disposed on the top surface of the substrate and extends from the first edge of the recessed region. It has a length defined from the first edge of the opening. The second-end portion is also disposed on the top surface of the substrate and extends from the second edge of the recessed region. It has a length defined from the second edge of the recessed region, and it is longer than the length of the first-portion.

REFERENCES:
patent: 6313541 (2001-11-01), Chan et al.
patent: 6362531 (2002-03-01), Stamper et al.
patent: 6560862 (2003-05-01), Chen et al.
AFM Sampling Prober(Preliminary Information):Non-Contact Electro-Force Sampling System, at http://www.mfitech.com/products/samprob.htm, 2 pages (last visited Feb. 28, 2002).
“AFM Real-Time Prober,”Micron Force Instruments, (last visited Feb. 28, 2002).
AFM Real-Time Prober FAQs, at http://www.mfitech.com/products/rtp_faq.htm, 3 pages (last visited Feb. 28, 2002).
NDT Update: Microscopy—Submicron Electrical Probing, at http://www.mfitech.com/press
dtupdate_submicron_elec_probing.htm, 2 pages (last visited Feb. 28, 2002).
Krieg, K. et al., “Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits,”Micron Force Instruments, (last visited Feb. 28, 2002).
Probe Tutorial, at http://www.tektronix.com/Measurement/Products/catalog/Accessories/probes/index.html, 12 pages (last visited Feb. 28, 2002).
Probing High-Speed Digital Designs, at http://www.signalintegrity.com/articles/straight/probes.htm, 9 pages (last visited Feb. 28, 2002).

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