Metal bevel process for multi-level metal semiconductor applicat

Details Metal bevel process for multi-level metal semiconductor applicat Metal bevel process for multi-level metal semiconductor applicat

1983-08-08

1984-01-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156656, 1566591, 430316, 430318, C23F 102, C03C 1500, C03C 2506, B44C 122

Patent

active

044251831

ABSTRACT:
A process for beveling the sharp corners on an integrated circuit metal layer, which corners were created by commonly practiced masking and etching steps. In one form, the photoresist mask used to etch the lower level metal pattern is retained on the wafer as during the beveling operation. With a positive photoresist and an aluminum alloy metal lower level layer, an etch with an alkaline photoresist solvent will isotropically remove both photoresist and metal, but at a controlled difference in rate. Beveling of the metal corners suppresses the reentry effect otherwise encountered when subsequent dielectric materials are deposited over the lower level metal layer.

REFERENCES:
patent: 4354897 (1982-10-01), Nakajima

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