Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Portion of housing of specific materials
Patent
1998-04-06
1999-11-23
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Portion of housing of specific materials
257699, 257787, H01L 2306
Patent
active
059905530
ABSTRACT:
Polyimide layers having special properties are formed on the bottom surface of a metallic body for a metal-based semiconductor circuit substrate with a polyimide layer as an insulator. There are four lamination methods: (a) a method in which a layer of thermoplastic polyimide resin (1) and a layer of non-thermoplastic polyimide resin are laminated on the bottom surface of the metallic body one over another in this order, (b) a method in which a layer of thermoplastic polyimide resin (1), a layer of non-thermoplastic polyimide resin and a layer of thermoplastic polyimide resin (2) are laminated on the bottom surface of a metallic body one over another in this order, (c) a method in which a layer of non-thermoplastic polyimide resin is laminated on the bottom surface of a metallic body and (d) a method in which a layer of thermoplastic polyimide resin (2) is laminated on the bottom surface of a metallic body. The resulting semiconductor circuit substrate has improved properties: flat joins to connect external terminals, small variations in shape due to temperature changes, the mounting properties to a mother board, the absorption efficiency of infrared rays during solder reflowing, plating resistance and the bonding reliability to other objects.
REFERENCES:
patent: 3364400 (1968-01-01), Granberry
patent: 5521437 (1996-05-01), Oshima et al.
patent: 5751058 (1998-05-01), Matsuki
patent: 5834850 (1998-11-01), Hotta et al.
Fujita Kazuhito
Morita Moritsugu
Tanaka Hirofumi
Clark Sheila V.
Mitsui Chemicals Inc.
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