Metal adhesion by induced surface roughness

Details Metal adhesion by induced surface roughness Metal adhesion by induced surface roughness

2008-08-04

2011-10-18

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S114000, C438S462000, C438S667000, C257SE21239

Reexamination Certificate

active

08039314

ABSTRACT:
Back side metal (BSM) delamination induced by chip dicing of silicon wafers is avoided by roughening the polished silicon surface at chip edges by etching. The Thru-Silicon-Via (TSV) structures used in 3D chip integration is masked at the back side from roughening to maintain the polished surface at the TSV structures and, thus, reliable conductivity to the BSM layer.

REFERENCES:
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6078068 (2000-06-01), Tamura
patent: 6188120 (2001-02-01), Andricacos et al.
patent: 6734090 (2004-05-01), Agarwala et al.
patent: 6803309 (2004-10-01), Chou et al.
patent: 7163883 (2007-01-01), Agarwala et al.
patent: 7195952 (2007-03-01), Vinn et al.
patent: 7211834 (2007-05-01), Sunachi et al.
patent: 2003/0199179 (2003-10-01), Dozier, II et al.
patent: 2006/0220249 (2006-10-01), Johnston et al.
patent: 2006/0278254 (2006-12-01), Jackson
patent: 2007/0231963 (2007-10-01), Doan et al.

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