Mesoporous films having reduced dielectric constants

Details Mesoporous films having reduced dielectric constants Mesoporous films having reduced dielectric constants

2005-09-13

2005-09-13

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Composite having voids in a component

C428S312600, C428S315500

Reexamination Certificate

active

06942918

ABSTRACT:
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

REFERENCES:
patent: 2692838 (1954-10-01), Thurber
patent: 4010133 (1977-03-01), Nakayama
patent: 4271210 (1981-06-01), Yoldas
patent: 5021398 (1991-06-01), Sharma et al.
patent: 5605628 (1997-02-01), Davidson et al.
patent: 5645891 (1997-07-01), Liu et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 5858526 (1999-01-01), Floch et al.
patent: 5889449 (1999-03-01), Fiedziuszko
patent: 5922299 (1999-07-01), Bruinsma et al.
patent: 5955140 (1999-09-01), Smith et al.
patent: 5969088 (1999-10-01), Ezzell et al.
patent: 6011167 (2000-01-01), Tashiro et al.
patent: 6027666 (2000-02-01), Ozin et al.
patent: 6120891 (2000-09-01), Balkus, Jr. et al.
patent: 6208014 (2001-03-01), Wu et al.
patent: 6211096 (2001-04-01), Allman et al.
patent: 6329017 (2001-12-01), Liu et al.
patent: 0 775 669 (1997-05-01), None
patent: 9937705 (1999-07-01), None
patent: 0037374 (2000-06-01), None
patent: 0039028 (2000-07-01), None
“Introduction to Ceramics” p. 948, John Wiley & Sons, Inc., 1970.
“Sol-Gel Science”, p. 118, Academic Press, Inc., Harcourt Brace Jovanovich Publishers, 1990.
“Nanoporous Silica For Low K Dielectrics”, Ramos, et al, 443 Mat. Res. Soc. Symp. Proc. vol. 91, 1997.
“Pore Structure Characterization of Porous Films”, Glaves, et al, 5 Langmuir 459-66, 1989.
“Microporous and Mesoporous Materials”, Impens, et al, 1999, 28, 217-232.
“A New Family of Mesoporous Molecular Sieves Prepared With Liquid Crystal Templates”, Beck, et al, 114 J.Am. Chem. Soc. 10834-43, 1992.
Characterization of Engineering Surfaces By Grazing-Incidence X-ray Reflectivity, Bowen, et al, Nanotechnology, 4, p. 175-182, 1993.
Derwent (2000-482474).
Derwent (2000-490810).
D. Zhao, et al, “Continuous Mesoporous Silica Films With Highly Ordered . . . ”, Adv. Materials, 1998, vol. 10, No. 16, pp. 1380-1385.
D. Zhao, et al, “Nonionic Triblock and Star Diblock Copolymer and . . . ”, J. or Amer. Chem. Soc., 1998, vol. 120, pp. 6024-6036.

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