Mesh pad structure to eliminate IMD crack on pad

Details Mesh pad structure to eliminate IMD crack on pad Mesh pad structure to eliminate IMD crack on pad

2005-04-05

2005-04-05

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S623000, C438S637000, C438S692000

Reexamination Certificate

active

06875682

ABSTRACT:
A method is disclosed of forming a bonding pad that is immune to IMD cracking. A partially processed semiconductor wafer is provided having all metal levels completed. A blank dielectric layer is formed over the uppermost metal level. Patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells. The trenches are filled with a conducting material and, after performing CMP, bonding metal patterns are deposited. Wires are bonded onto said bonding metal patterns, after which a passivation layer is formed.

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