Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1988-06-20
1990-02-13
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Flip-flop
365227, 365182, 365190, 307446, G11C 1140, G11C 700
Patent
active
049012797
ABSTRACT:
A static random access memory cell implemented with metal Schottky field-effect transistors. The cell has first and second branches, each of the branches including: a depletion mode current limiting transistor having a drain connected to a first circuit node; a depletion mode load transistor having a drain connected to the source of the current limiting transistor and a source connected to a second circuit node; an enhancement mode active transistor having a drain connected to the second circuit node and a source connected to a third circuit node; an enhancement mode access transistor having a source connected to the second circuit node and a gate connected to the gate of the current limiting transistor; the gate of the load transistor connected to the second circuit node; the commonly connected gates of the current limiting transistor and the access transistor adapted to receive a word-line signal; and the drain of the access transistor adapted to receive a bit-line signal. The first circuit node is adapted for connection to a source of bias voltage, and the third circuit node is adapted for connection to a circuit ground. The first and second branches are cross-connected between the second nodes and the gates of the active transistors.
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Brandt Jeffrey L.
Garcia Alfonso
Hecker Stuart N.
International Business Machines - Corporation
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