MESFET logic device with clamped output drive capacity and low p

Electronic digital logic circuitry – Function of and – or – nand – nor – or not – Field-effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

326 30, H03K 190952

Patent

active

057265917

ABSTRACT:
A logic gate circuit includes a logic gate stage to which an input signal is supplied, for outputting a signal depending on a state of the input signal, an output driver stage having an enhancement-type transistor for pull-up and a pull-down circuit, the enhancement-type transistor having a drain connected to a power supply line, a gate to which the signal output from the logic gate stage is supplied and a source connected to the pull-down circuit, the pull-down circuit being connected to the ground line and controlled by the input signal, and a clamping circuit for clamping a gate voltage of the enhancement-type transistor of the output driver stage at a constant voltage so that a node at which the source of the enhancement-type transistor and the pull-down circuit are connected has a high level, the node being an output terminal of the logic gate circuit. A logic gate circuit may have at least an output driver stage including an enhancement-type transistor for pull-up and an enhancement-type transistor for pull-down, and a clamping circuit for clamping the gate voltage of the enhancement-type transistor for the pull-up.

REFERENCES:
patent: 4716311 (1987-12-01), Davenport et al.
patent: 4810969 (1989-03-01), Fulkerson
patent: 4935647 (1990-06-01), Larkins
patent: 5021686 (1991-06-01), Kawata et al.
patent: 5107144 (1992-04-01), Hirayama
patent: 5182473 (1993-01-01), Wikstrom
patent: 5343091 (1994-08-01), Terada
Patent Abstracts of Japan--vol. 14, No. 411 (E-0973) Sep. 5, 1990 & JP-A-02 155 309 (Oki Electric Co Ltd.) Jun. 14, 1990. Abstract.
Patent Abstracts of Japan--vol. 14, No. 502 (E-0997) Nov. 2, 1990 & JP-A-02 209 011 (Agency of Ind Science and Technol.) Aug. 20, 1990. Abstract.
Patent Abstracts of Japan--vol. 14, No. 142 (E-904) Mar. 16, 1990 & JP-A-02 005 618 (Fujitsu Ltd.) Jun. 23, 1988. Abstract.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MESFET logic device with clamped output drive capacity and low p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MESFET logic device with clamped output drive capacity and low p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MESFET logic device with clamped output drive capacity and low p will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-142466

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.