MESFET circuit utilizing only positive power supplies

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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Details

327416, H03K 17687

Patent

active

061305707

ABSTRACT:
A biasing system for an FET utilizes a source biasing capacitor which is charged to a positive DC ground voltage relative to RF ground. The gate of the FET is thus biased negative to the source without requiring a negative power supply.

REFERENCES:
patent: 4810911 (1989-03-01), Noguchi
patent: 4908531 (1990-03-01), Podell et al.
patent: 5497118 (1996-03-01), Ueno et al.
patent: 5548239 (1996-08-01), Kohama
patent: 5554892 (1996-09-01), Norimatsu

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