Mesa bipolar memory cell and method of fabrication

Details Mesa bipolar memory cell and method of fabrication Mesa bipolar memory cell and method of fabrication

1981-05-21

1983-09-13

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 56, G11C 1140

Patent

active

044046588

ABSTRACT:
A memory cell having two mesa bipolar transistors separated by a valley in which two doped polycrystalline load resistors are formed. Doped polycrystalline conductors connect the resistors to a respective backside metallic collector contact which is between a support structure and a transistor and to a respective base.
The cell is fabricated by removing a substrate upon which was formed an epitaxial layer and top support, applying a backside metallic layer, forming a bottom support, removing the top support, etching the epitaxial layer to form mesas, etching the backside metal to form discrete contacts, and forming multi-level resistors and conductors in the valley between the mesa transistors separated by insulative material.

REFERENCES:
patent: 3432919 (1969-03-01), Rosvold
patent: 3480841 (1969-11-01), Castrucci et al.
patent: 3506502 (1970-04-01), Nakamura
patent: 3519901 (1970-07-01), Bean et al.
patent: 3659162 (1972-04-01), Toshio et al.
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4035830 (1977-07-01), Kim
patent: 4131909 (1978-12-01), Matsuda et al.
patent: 4131985 (1979-01-01), Greenwood et al.
patent: 4146905 (1979-03-01), Appels et al.
patent: 4189342 (1980-02-01), Kock
patent: 4249195 (1981-02-01), Roger
patent: 4290077 (1981-09-01), Ronen
patent: 4356056 (1982-10-01), Cornette et al.

Affiliated with

Also associated with

Rating

Mesa bipolar memory cell and method of fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mesa bipolar memory cell and method of fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mesa bipolar memory cell and method of fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1733685