Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Yield
Reexamination Certificate
2008-10-03
2011-11-08
Whitmore, Stacy (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Yield
C716S050000, C716S053000, C716S055000
Reexamination Certificate
active
08056029
ABSTRACT:
Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.
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O'Brien Sean C
Zhang Guohong
Brady III Wade J.
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Whitmore Stacy
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