Merging sub-resolution assist features of a...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Reexamination Certificate

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07451428

ABSTRACT:
Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

REFERENCES:
patent: 2002/0155357 (2002-10-01), LaCour
patent: 2005/0208396 (2005-09-01), Lippincott
UMC and Synopsys Develop Reference Flow for UMC's Advanced Deep Submicron Processes, Collaboration Validates Synopsys' Galaxy Design Platform for UMC's 0.13 micron Process, Synopsys, Inc., Corporate, Copyright © 2005 Synopsys, Inc., http://www.synposys.com, 2 pages, May 3, 2004.
Mentor Graphics Calibre Approved Verification Tool for IBM-Chartered 90nm Design Enablement Platform, www.mentor.com, Copyright © 2002, Mentor Graphics Corporation, 8 pages, May 24, 2004.
TSMC and Synopsys Address Design Challenges for 90 Nanometer and Below with TSMC Reference Flow 5.0, Synopsys, Inc., Corporate, Copyright © 2005 Synopsys, Inc., http://www.synopsys.com, 3 pages, Jun. 7, 2004.
MaskTooks, Products/Profile, ASML MaskTools, Copyright © 2005 ASML, www.masktools.com, 13 pages, 2005.
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Pending Patent Application filed Apr. 26, 2005, entitled “Modifying Merged Sub-Resolution Assist Features Of A Photolithographic Mask”, 40 pages specification, claims and abstract, 3 pages of drawings, inventors Sean C. O'Brien et al., Apr. 26, 2005.

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