Merged platinum silicide fuse and Schottky diode and method of m

Details Merged platinum silicide fuse and Schottky diode and method of m Merged platinum silicide fuse and Schottky diode and method of m

1981-11-12

1985-05-21

James, Andrew J.

357 15, 357 51, 357 53, 357 67, H01L 2948, H01L 2702, H01L 2940, H01L 2348

Patent

active

045189811

ABSTRACT:
A merged platinum silicide fuse and Schottky diode structure and method of manufacturing the merged structure is presented. The merged structure is formed by an insulating layer having an aperture over a silicon substrate. A shaped layer of polysilicon lies on the insulating layer and contacts the substrate through the aperture; a layer of platinum silicide in the same shape as the polysilicon layer covers the polysilicon layer. The region of polysilicon - PtSi layers over the substrate contact forms a Schottky diode and the region on the insulating layer forms the fuse. This merged structure has superior Schottky diode electrical characteristics and is more compact compared to prior art structures.

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S. P. Murarka, "Refractory Silicides For Integrated Circuits", Journal of Vacuum Science and Technology, vol. 17 (1980) pp. 775-792.
A. P. Ho et al., "Self-Aligned Process For Forming Metal-Silicide And Polysilicon Composite Base Contact", IBM Technical Disclosure Bulletin, vol. 22 (1980) 5336-5338.

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