Merged P-i-N Schottky structure

Details Merged P-i-N Schottky structure Merged P-i-N Schottky structure

2006-04-11

2010-12-28

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S169000, C438S174000, C257SE51009

Reexamination Certificate

active

07858456

ABSTRACT:
Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

REFERENCES:
patent: 6294445 (2001-09-01), Bol et al.
patent: 6524900 (2003-02-01), Dahlqvist et al.
patent: 2004/0061195 (2004-04-01), Okada et al.
patent: 2004/0212011 (2004-10-01), Ryu
patent: 03-024767 (1991-02-01), None
patent: 10-117003 (1998-05-01), None

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