Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With switching speed enhancement means
Patent
1992-08-13
1993-08-31
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With switching speed enhancement means
257260, 257485, 257156, 257476, H01L 2948
Patent
active
052411958
ABSTRACT:
A merged P-I-N/Schottky power rectifier includes trenches, and P-N junctions along the walls of the trenches and along the bottoms of the trenches. By forming the P-N junctions along the trench walls, the total area of the P-N junctions relative to the surface area of the device can be increased, to thereby improve the device's on-state characteristics without sacrificing the total area of the Schottky region. The trenches may be U or V shaped in transverse cross-section or of other transverse cross-sectional shape, and the trenches may be polygonal or circular in top view.
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Analysis of a High-Voltage Merged p-i-n/Schottky (MPS) Rectifier, B. J. Baliga, IEEE Electron Device Letters, vol. EDL-8, No. 9, 1987, pp. 407-409.
The Merged P-I-N Schottky (MPS) Rectifier: A High-Voltage, High-Speed Power Diode, B. J. Baliga et al.; Proceedings of the IEDM--International Electron Devices Meeting, Washington, D.C., Dec. 1987, pp. 658-661.
Baliga Bantval J.
Tu Shang-hui L.
Mintel William
North Carolina State University at Raleigh
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