Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S393000, C257SE29001, C438S129000, C438S130000
Reexamination Certificate
active
07863691
ABSTRACT:
Disclosed are embodiments of an improved integrated circuit switching device that incorporates multiple sets of series connected field effect transistors with each set further connected in parallel between two nodes. The sets are arranged in a linear fashion with each set positioned such that it is in contact with and essentially symmetrical relative to an adjacent set. Arranging the sets in this manner allows adjacent diffusion regions of the same type (i.e., sources or drains) from adjacent sets to be merged. Merging of the diffusion regions provides several benefits, including but not limited to, reducing the device size, reducing the amount of required wiring for the device (i.e., reducing resistance) and reducing side capacitance between the now merged diffusion regions and the substrate. Also disclosed are embodiments of an associated design structure for the device and an associated method of forming the device.
REFERENCES:
patent: 4843440 (1989-06-01), Huang
patent: 5796674 (1998-08-01), Matsuura
patent: 7098755 (2006-08-01), Zhao et al.
Wagner, Jr. Lawrence F.
Wolf Randy L.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Montalvo Eva Yan
Pizarro Marcos D.
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