Merged bipolar/field-effect bistable memory cell

Details Merged bipolar/field-effect bistable memory cell Merged bipolar/field-effect bistable memory cell

1979-04-23

1981-06-30

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

G11C 1140

Patent

active

042766168

ABSTRACT:
A compact bistable semiconductor memory cell usable in static electronic information storage devices includes a field-effect transistor merged with a bipolar transistor for storing a binary information bit.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 3731164 (1973-05-01), Cheney
patent: 3893085 (1975-07-01), Hansen
patent: 4090254 (1978-05-01), Ho et al.
Hibberd, "Integrated Circuits, a Basic Course for Engineers and Technicians", pp. 63-68, McGraw-Hill Book Company, 1969.
Sander, "FAM 15.4: a 4096X1(I.sup.3 L) Bipolar Dynamic RAM", 1976 IEEE International Solid-State Circuits Conference.
Data sheet for F2114, "1024X4-Bit Static Random Access Memory, Fairchild Isoplanar Silicon Gate MOS Integrated Circuit", 8/74.

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