Mercury vapor leaching from microelectronic substrates

Details Mercury vapor leaching from microelectronic substrates Mercury vapor leaching from microelectronic substrates

1979-01-17

1980-06-10

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

75 83, 156646, 156656, 156664, 252 791, C23F 100

Patent

active

042071380

ABSTRACT:
A method for leaching mercury soluble metals from mercury insoluble substrates such as microelectronic devices without damaging the substrate or contaminating the environment with mercury. A mercury vapor jet is formed by passing mercury vapors through an orifice at residual gas pressure of about 10.sup.-2 Torr and a temperature of from about 65.degree. C. to about 150.degree. C. The mercury vapor jet strikes the substrate at an angle which is substantially perpendicular to the center of the substrate and leaches the mercury soluble metal therefrom.

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patent: 3923569 (1975-12-01), Ono et al.
Hitch, "Phase Morphology . . . Inks," presented at 1971, International Microelectronic Symposium, Oct. 11-13, 1971, Chicago, Ill.
Hitch, "Adhesion, . . . Conductors," Journal of Elec. Materials, vol. 3, No. 2 (1974), pp. 553-577.

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