Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-02-07
2006-02-07
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
Reexamination Certificate
active
06995440
ABSTRACT:
A microelectromechanical system (MEMS) switch has a beam with a high-resonance frequency. The MEMS switch includes a substrate having an electrical contact and a hexsil beam coupled to the substrate in order to transfer electric signals between the beam and the contact when an actuating voltage is applied to the switch. A method of fabricating a MEMS switch includes forming a substrate having a contact and forming a beam. The method further includes attaching the beam to the substrate such that the beam is maneuverable into and out of contact with the substrate.
REFERENCES:
patent: 6396368 (2002-05-01), Chow et al.
patent: 6535663 (2003-03-01), Chertkow
Keller, C. G.,Microfabricated High Aspect Ratio Silicon Flexures: HEXSIL,RIE, and KOH Etched Design and Fabrication,MEMS Precision Instruments, El Cerrito, CA,(1998),pp. 23-44, 133-139, 141-153.
Coleman W. David
Intel Corporation
Schwegman Lundberg Woessner & Kluth P.A.
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