MEMS structure and method for fabricating the same

Details MEMS structure and method for fabricating the same MEMS structure and method for fabricating the same

2006-07-11

2006-07-11

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S052000

Reexamination Certificate

active

07074635

ABSTRACT:
A MEMS structure includes a floating space formed on the upper silicon layer by a first dry etching, and then dry etched to a predeterminded depth on the lower silicon layer by etching gas supplied through the etched holes from which the oxide film has been removed at the bottom surface thereof in a second dry etching process, so as to float the movable portion; and the oxide film for preventing electrical short circuit remaining on the lower surface of the movable portion so as to correspond to the lower silicon layer leaving the floating space therebetween.

REFERENCES:
patent: 2004/0072386 (2004-04-01), Tanabe et al.

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