Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-03-01
2011-03-01
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S419000
Reexamination Certificate
active
07898044
ABSTRACT:
An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.
REFERENCES:
patent: 2007/0284682 (2007-12-01), Laming et al.
patent: WO-98/37388 (1998-08-01), None
Nakatani Goro
Okada Mizuho
Yamashita Nobuhisa
Menz Douglas M
Rabin & Berdo PC
Rohm & Co., Ltd.
LandOfFree
MEMS sensor and production method of MEMS sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MEMS sensor and production method of MEMS sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MEMS sensor and production method of MEMS sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2632686