MEMS sensor and production method of MEMS sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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C257S419000

Reexamination Certificate

active

07898044

ABSTRACT:
An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.

REFERENCES:
patent: 2007/0284682 (2007-12-01), Laming et al.
patent: WO-98/37388 (1998-08-01), None

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