Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-09-06
2008-09-16
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S415000, C257S417000, C257S418000, C257S419000, C257SE27006, C349S199000
Reexamination Certificate
active
07425749
ABSTRACT:
A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplies power to the electronic device and transceives electrical signals. The sensor is able to operate dynamically, in real-time. For example, if the mechanical device undergoes a sequence of mechanical states at a corresponding plurality of times, the electronic device is able to supply a sequence of electrical signals to the pixel interface that are responsive to the sequence of mechanical states, at the plurality of times. Each MEMS pixel sensor may include a number of mechanical devices, and corresponding electronic devices, to provide redundancy or to measure a broadband response range.
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Joao Gaspar, Haohua Li, Paulo Peieiro Freitas, “Integrated Magnetic Sensing of Electro-statically Actuated Thin-Film Microbridges”, Journal of MicroElectroMechanical Systems, vol. 12, No. 5, Oct. 2003, p. 550-556.
Hartzell John Walter
Wolfson Michael Barrett
Zhan Changqing
Harriston William
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Tran Minh-Loan
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