Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-07-10
2008-12-02
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S041000, C216S058000, C216S083000, C438S689000, C438S706000, C359S290000, C359S291000
Reexamination Certificate
active
07459093
ABSTRACT:
A process for constructing a micro-electro-mechanical system (MEMS) device includes etching the topside of a silicon wafer to form a first support layer having asymmetric pads. The backside of the silicon wafer is etched to form a top layer with a mirror, beam structures extending from the mirror, and rotating comb teeth extending from the beam structures. Before or after the backside of the silicon wafer is etched, the topside of the silicon wafer is bonded to a glass wafer that forms a second support layer. Prior to bonding the silicon wafer to the glass wafer, the glass wafer may be etched to form a recess and/or a cavity that accommodates mobile elements in the silicon wafer. Due to the asymmetry of the pads in the first support layer below the rotating comb teeth in the top layer, oscillation can be initiated.
REFERENCES:
patent: 6369931 (2002-04-01), Funk et al.
patent: 6872319 (2005-03-01), Tsai
patent: 2002/0041455 (2002-04-01), Sawada et al.
patent: 2005/0054128 (2005-03-01), Gasparyan et al.
Advanced NuMicro Systems, Inc.
Ahmed Shamim
Hsia David C.
Patent Law Group LLP
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