Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S415000, C257SE31001, C257SE21001, C438S050000, C438S051000, C438S052000, C438S053000
Reexamination Certificate
active
07977757
ABSTRACT:
An MEMS element (A1) includes a substrate (1), and a first electrode (2) formed on the substrate (1). The MEMS element (A1) further includes a second electrode (3) including a movable portion (31) spaced from the first electrode (2) and facing the first electrode. The movable portion (31) is formed with a plurality of through-holes (31a). Each of the through-holes (31a) may have a rectangular cross section.
REFERENCES:
patent: 5619061 (1997-04-01), Goldsmith et al.
patent: 6028332 (2000-02-01), Kano et al.
patent: 6060756 (2000-05-01), Machida et al.
patent: 6105427 (2000-08-01), Stewart et al.
patent: 6435028 (2002-08-01), Nagahara
patent: 6483395 (2002-11-01), Kasai et al.
patent: 6525396 (2003-02-01), Melendez et al.
patent: 6635919 (2003-10-01), Melendez et al.
patent: 2002/0030729 (2002-03-01), Sako et al.
patent: 2003/0022423 (2003-01-01), Staker et al.
patent: 2003/0022424 (2003-01-01), Staker et al.
patent: 2006/0171097 (2006-08-01), Shimanouchi et al.
patent: 2006/0226735 (2006-10-01), Ikehashi
patent: 2007/0039147 (2007-02-01), Shimanouchi et al.
patent: 10-284771 (1998-10-01), None
patent: 2001-235485 (2001-08-01), None
patent: 2001-266727 (2001-09-01), None
patent: 2004-12327 (2004-01-01), None
patent: 2004-85870 (2004-03-01), None
patent: 2005-40885 (2005-02-01), None
International Search Report from corresponding PCT/JP2006/310053, mailed Jul. 18, 2006.
Tajiri Hiroyuki
Yoshikawa Yasuhiro
Hamre Schumann Mueller & Larson P.C.
Joy Jeremy J
Rohm & Co., Ltd.
Smith Zandra
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