Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-05-31
2005-05-31
Tran, Michael (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S052000, C257S254000, C257S415000, C257S419000, C257S421000, C369S119000, C438S073000
Reexamination Certificate
active
06900510
ABSTRACT:
A Microelectromechanical (MEMS) device and method of fabrication that can minimize derailing of an actuable element of the MEMS device during fabrication can include a MEMS actuator to selectively generate displacement forces to displace an actuable element along a path between sidewalls of a channel. The sidewalls can have stops formed therein that can interact with surfaces on the actuable element to limit displacement of the actuable element during fabrication. One of the sidewalls can be indented to form the stops and the actuable element can have an arm portion that extends between the stops. The sidewalls can be offset to form the stops on spaced apart faces on opposite sides of the channel and the actuable element can be offset between the spaced apart faces to form offset faces in an opposing relationship with the spaced apart faces on the sidewalls. In addition, the actuable element and the sidewalls may be so shaped as to maintain a generally constant width between them.
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Neal Matthew J.
Sidman Alan L.
Tamura Hirokazu
Zhe Jiang
Advanced Microsensors
Foley & Hoag LLP
Furukawa America, Inc.
Tran Mai-Huong
Tran Michael
LandOfFree
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