Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2007-06-11
2009-06-23
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S181000, C438S510000, C438S542000, C257SE21056, C257SE21238, C257SE21466
Reexamination Certificate
active
07550358
ABSTRACT:
A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.
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Feng Songlin
Li Xinxin
Wang Yuelin
Yang Heng
Ackerman Stephen B.
Lee Cheung
Lindsay, Jr. Walter L
Pike Rosemary L. S.
Saile Ackerman LLC
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