Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-08-02
2011-08-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S417000, C257S418000, C257S419000, C257S420000, C257S688000, C257SE29324
Reexamination Certificate
active
07989905
ABSTRACT:
A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.
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Inaba Shogo
Mori Takeshi
Sato Akira
Watanabe Toru
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Soward Ida M
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