Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2011-03-01
2011-03-01
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257SE23141, C310S012020
Reexamination Certificate
active
07898081
ABSTRACT:
A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.
REFERENCES:
patent: 6936524 (2005-08-01), Zhu et al.
patent: 2002/0130561 (2002-09-01), Temesvary et al.
U.S. Appl. No. 12/056,286, Integrated structure for MEMS device and semiconductor device and method of fabricating the same, All, Mar. 27, 2008.
Chen Min
Ho Li-Hsun
Huang Chien-Hsin
Lan Bang-Chiang
Wang Ming-I
Dickey Thomas L
Hsu Winston
Margo Scott
United Microelectronics Corp.
Yushin Nikolay
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