MEMS device and method of making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead

Reexamination Certificate

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C257SE23141, C310S012020

Reexamination Certificate

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07898081

ABSTRACT:
A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.

REFERENCES:
patent: 6936524 (2005-08-01), Zhu et al.
patent: 2002/0130561 (2002-09-01), Temesvary et al.
U.S. Appl. No. 12/056,286, Integrated structure for MEMS device and semiconductor device and method of fabricating the same, All, Mar. 27, 2008.

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