Memory with storage cells having SOI drive and access transistor

Details Memory with storage cells having SOI drive and access transistor Memory with storage cells having SOI drive and access transistor

1997-12-24

1999-08-24

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Electrical contacts

365154, 365176, 365216, G11C 1100

Patent

active

059432586

ABSTRACT:
An integrated circuit (10). The integrated circuit comprises a first SOI transistor (AT3) having a body and for performing first function. The integrated circuit further comprises a second SOI transistor (DT3) having a body and for performing a second function different than the first function. Lastly, the integrated circuit comprises a conductor (BT1) connecting the body of the first SOI transistor to the body of the second SOI transistor such that the bodies of the first SOI transistor and the second SOI transistor float together.

REFERENCES:
patent: 5515313 (1996-05-01), Yamaguchi
patent: 5706226 (1998-01-01), Chan et al.
J.A. Mandelman, F. Assaderaghi, and L.L. Hsu; "SOI MOSFET Mismatch Due to Floating-Body Effects", pp. 164-165 of 1997 IEEE International SOI Conference Proceedings, dated Oct. 6-9, 1997.

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