Memory with split gate devices and method of fabrication

Details Memory with split gate devices and method of fabrication Memory with split gate devices and method of fabrication

2006-05-23

2006-05-23

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S758000

Reexamination Certificate

active

07049654

ABSTRACT:
A DRAM fabricated on an SOI substrate employing single body devices as memory cells without relying on a field through the insulative layer of the SOI is described. Floating body devices are defined by orthogonally disposed lines with both a front gate and back gate for each body being formed on the insulative layer.

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