Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1994-06-16
1996-07-23
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
36518907, 365201, 365210, G11C 700
Patent
active
055396941
ABSTRACT:
A circuit for the detection of current leaks on a bit line of a memory (such as an EPROM or flash EPROM), which essentially utilizes a current generator and a circuit to apply zero volts to the gates of all the cells of the bit line. The detection information is delivered by a comparison circuit. It corresponds to the result of the comparison between the test current and the current flowing in the bit line. Advantageously, the detection circuit is incorporated into the read circuit of the memory. Also disclosed is the associated detection method and a memory circuit using a detection circuit such as this.
REFERENCES:
patent: 4800332 (1989-01-01), Hutchins
patent: 4841482 (1989-06-01), Kreifels et al.
patent: 5117394 (1992-05-01), Amin et al.
patent: 5142496 (1992-08-01), Van Buskirk
patent: 5157626 (1992-10-01), Watanabe
patent: 5218570 (1993-06-01), Pascucci et al.
patent: 5241505 (1993-08-01), Hashimoto
patent: 5371706 (1994-12-01), Krentz et al.
IBM Technical Disclosure Bulletin, vol. 33, No. 5, Oct. 1990, pp. 389-390, "Bit Line Leakage Screen for Directory Chips".
Formby Betty
Groover Robert
SGS-Thomson Microelectronics S.A.
Yoo Do Hyun
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